Study of ICP-CVD grown Amorphous and Microcrystalline Silicon thin films in HIT structure
نویسندگان
چکیده
–We have investigated undoped hydrogenated amorphous silicon (a-Si:H) p-type crystalline silicon (c-Si) structures with and without a microcrystalline silicon (c-Si) buffer layer as a potential for hetero-junction (HJ) solar cell. Hydrogenated amorphous silicon and microcrystalline silicon film have been grown by inductively coupled plasma chemical vapour deposition (ICP-CVD). Solid phase crystallization (SPC) has been included to the process to improve the percentage of crystallization around 72%. The leakage current of HIT structure has been observed in the order of 10 Amp. It has also been indicated that the activation energy of the HIT structure is 0.795 eV at applied voltage is below 0.55 Volt. Keywords––ICP-CVD process; Amorphous Silicon; Microcrystalline Silicon; Solid Phase Crystallization; Heterojunction
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